Tokyo, Japan

Itsuki Kashiwagi

This inventor holds 2 USPTO granted patents. Top assignee: Kanto Kagaku Kabushiki Kaisha. Active years: 2023-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Itsuki Kashiwagi. Retrieved from https://idiyas.com/inventor/itsuki-kashiwagi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 50.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2023-2026

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2 patents (USPTO):Explore Patents

Title: Innovations by Itsuki Kashiwagi

Introduction

Itsuki Kashiwagi is a notable inventor based in Tokyo, Japan. He has made significant contributions to the field of materials science, particularly in the development of compositions for removing ruthenium from substrates. His work addresses critical challenges in the semiconductor industry.

Latest Patents

Kashiwagi holds a patent for a composition designed to effectively remove ruthenium (Ru) that remains on substrates. The invention focuses on providing a remover composition that maintains a pH of 8 or higher at 25°C. This composition includes one or more pH buffer ingredients, which help to inhibit the evolution of RuO gas during the removal process.

Career Highlights

Kashiwagi is associated with Kanto Kagaku Kabushiki Kaisha, a company known for its innovative chemical solutions. His work has been instrumental in advancing technologies that require precise material handling and removal processes.

Collaborations

Kashiwagi collaborates with Takuo Ohwada, contributing to the development of effective chemical compositions and enhancing the capabilities of their research team.

Conclusion

Itsuki Kashiwagi's innovative work in developing a remover composition for ruthenium showcases his expertise and commitment to advancing materials science. His contributions are vital for the semiconductor industry and highlight the importance of effective chemical solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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