Amagasaki, Japan

Ito Seitaro

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Basf Se Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ito Seitaro. Retrieved from https://idiyas.com/inventor/ito-seitaro

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

 

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Ito Seitaro - Innovator in Electrode Active Materials

Introduction

Ito Seitaro is an inventor based in Amagasaki, Japan. He is currently employed at BASF SE Corporation, where he contributes to advancements in materials science. Although he has not yet been granted any patents, his work is focused on innovative processes that could have significant implications in the field of electrode materials.

Latest Patent Applications

Ito Seitaro's notable patent application is titled "PROCESS FOR MAKING A COATED CATHODE ACTIVE MATERIAL." This application describes a process for creating an electrode active material according to the general formula Li(TMM)O. In this formula, TM includes a combination of nickel and at least one of cobalt, manganese, and aluminum. The application specifies that 'M' is selected from the group consisting of niobium, tantalum, and at least one of cobalt, manganese, and aluminum. The variables 'y' and 'x' are defined within specific ranges, indicating the precise chemical composition required for the process.

Conclusion

Ito Seitaro is an emerging inventor whose work at BASF SE Corporation focuses on innovative processes for electrode materials. His contributions, particularly in the area of cathode active materials, hold promise for future advancements in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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