Jerusalem, Israel

Israel Beinglass

This inventor holds 2 USPTO granted patents. Top assignees: The United States of America as Represented by the Department of Energy, The United States of America as Represented by the United States Energy. Active years: 1977-1978.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Israel Beinglass. Retrieved from https://idiyas.com/inventor/israel-beinglass-sohymx2c

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 16(Granted Patents)


Company Filing History:


Years Active: 1977-1978

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2 patents (USPTO):Explore Patents

Title: Innovations of Israel Beinglass in Crystal Growth Technology

Introduction

Israel Beinglass is a notable inventor based in Jerusalem, Israel. He has made significant contributions to the field of crystal growth technology, particularly in the development of methods for growing HgI₂ crystals. With a total of 2 patents, his work has implications for advanced applications, including nuclear radiation detection.

Latest Patents

Israel Beinglass holds two recent patents that showcase his innovative approaches. The first patent is for an "Apparatus for growing HgI₂ crystals," which describes a method and horizontal furnace for vapor phase growth. This method utilizes controlled axial and radial airflow to maintain desired temperature gradients. The ampoule containing the source material is rotated while axial and radial air tubes are moved in opposite directions during crystal growth. This technique allows the crystal interface to advance in all directions, adhering to the crystallographic structure of the crystal. The crystals produced by this method are particularly applicable for use as room-temperature nuclear radiation detectors.

The second patent, titled "Temperature cycling vapor deposition HgI₂ crystal growth," also focuses on a method and horizontal furnace for vapor phase growth of HgI₂ crystals. Similar to the first patent, it employs controlled airflow to maintain temperature gradients and facilitates the growth of crystals suitable for nuclear radiation detection.

Career Highlights

Throughout his career, Israel Beinglass has worked with prominent organizations, including the United States Department of Energy. His expertise in crystal growth has positioned him as a key figure in the development of technologies that enhance the capabilities of nuclear radiation detection.

Collaborations

Israel has collaborated with notable individuals in his field, including Michael M Schieber and Giora Dishon. These partnerships have contributed to the advancement of his research and the successful implementation of his innovative methods.

Conclusion

Israel Beinglass is a distinguished inventor whose work in crystal growth technology has led to significant advancements in the field. His patents reflect a commitment to innovation and practical applications in nuclear radiation detection. His contributions continue to influence the scientific community and pave the way for future developments.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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