Yamanashi, Japan

Isao Makabe


Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2012

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1 patent (USPTO):Explore Patents

Title: Isao Makabe: Innovator in Semiconductor Technology

Introduction

Isao Makabe is a prominent inventor based in Yamanashi, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of advanced semiconductor devices that are crucial for various applications.

Latest Patents

Makabe holds a patent for a semiconductor substrate with AlGaN formed thereon and a semiconductor device using the same. This patent describes a semiconductor substrate that includes an AlN layer provided on a silicon substrate, an AlGaN layer with an Al composition ratio of 0.3 to 0.6, and a GaN layer provided on the AlGaN layer. This invention enhances the performance and efficiency of semiconductor devices.

Career Highlights

Isao Makabe is currently associated with Eudyna Devices Inc., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices, making them more efficient and reliable.

Collaborations

Makabe collaborates with various professionals in the field, including his coworker Ken Nakata. Their combined expertise contributes to the innovative projects at Eudyna Devices Inc.

Conclusion

Isao Makabe's contributions to semiconductor technology exemplify the spirit of innovation. His patent and ongoing work at Eudyna Devices Inc. highlight his commitment to advancing the field.

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