Osaka, Japan

Isao Kidoguchi

This inventor holds 1 USPTO granted patent. Top assignees: Production Engineering Assoc., Sumitomo Electric Industries, Co.. Active years: 1989.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Isao Kidoguchi. Retrieved from https://idiyas.com/inventor/isao-kidoguchi-zxbffmb1

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 14(Granted Patents)


Company Filing History:


Years Active: 1989

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1 patent (USPTO):Explore Patents

Title: Isao Kidoguchi: Innovator in Single-Crystal ZnSe Preparation

Introduction

Isao Kidoguchi is a notable inventor based in Osaka, Japan. He is recognized for his contributions to the field of materials science, particularly in the preparation of single-crystal zinc selenide (ZnSe). His innovative methods have implications in various technological applications.

Latest Patents

Isao Kidoguchi holds a patent for a "Method for preparing single-crystal ZnSe." This patent outlines a systematic approach to producing high-quality single-crystal ZnSe, which is essential for optoelectronic devices.

Career Highlights

Throughout his career, Kidoguchi has worked with prominent companies, including Sumitomo Electric Industries, Co. and Production Engineering Associates. His experience in these organizations has allowed him to refine his expertise in materials engineering and patent development.

Collaborations

Isao Kidoguchi has collaborated with notable colleagues such as Tsunemasa Taguchi and Hirokuni Nanba. These partnerships have contributed to advancements in their respective fields and have fostered innovation in materials science.

Conclusion

Isao Kidoguchi's work in the preparation of single-crystal ZnSe showcases his significant contributions to materials science. His innovative methods and collaborations highlight the importance of teamwork in advancing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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