Komoro, Japan

Isao Hagiwara

This inventor holds 1 USPTO granted patent. Top assignee: Other. Active years: 2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Isao Hagiwara. Retrieved from https://idiyas.com/inventor/isao-hagiwara-kehd32ee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:

goldMedal1 out of 834,601 
Other
 patents

Years Active: 2004

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1 patent (USPTO):Explore Patents

Title: Isao Hagiwara: Innovator in Semiconductor Manufacturing

Introduction

Isao Hagiwara is a notable inventor based in Komoro, Japan. He has made significant contributions to the field of semiconductor manufacturing, particularly through his innovative patent.

Latest Patents

Hagiwara holds a patent for a "Method of manufacturing semiconductor integrated circuit device." This method involves creating a high-frequency module by assembling a chip part and a semiconductor pellet on a wiring board. The process includes soldering these components while ensuring that the wiring board is separated from a heat block, which enhances the reliability of the soldering portion and improves the mounting horizontality of the semiconductor pellet.

Career Highlights

Throughout his career, Isao Hagiwara has focused on advancing semiconductor technology. His work has contributed to improved manufacturing processes, which are crucial for the development of high-frequency modules used in various electronic devices.

Collaborations

Hagiwara has collaborated with notable colleagues such as Yoshinori Shiokawa and Masakazu Hashizume. These partnerships have fostered innovation and have been instrumental in the development of his patented technologies.

Conclusion

Isao Hagiwara's contributions to semiconductor manufacturing highlight his role as an innovator in the field. His patent demonstrates a commitment to enhancing the reliability and efficiency of electronic components.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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