Company Filing History:
Years Active: 1991-1999
Title: **Irving B Ruppel, Jr.: Innovator in Silicon Carbide Technologies**
Introduction
Irving B Ruppel, Jr. is a prominent inventor based in Kenmore, NY. With a substantial portfolio of six patents, Ruppel has made significant contributions to the fields of material science and semiconductor technology. His innovative designs and methodologies focus primarily on silicon carbide (SiC) coatings, which have crucial applications in various high-performance industries.
Latest Patents
Among his latest inventions, Ruppel developed a method for coating a substrate with a silicon carbide film, specifically a sputtering target that comprises non-stoichiometric silicon carbide (SiC.sub.x). This innovative target allows for a DC magnetron sputtering rate that is nearly an order of magnitude higher than conventional targets, thus enhancing the efficiency and effectiveness of the production process for silicon carbide films.
Additionally, Ruppel's patents emphasize the creation of substrates that feature ultra-smooth surface finishes, making them ideal for high-density magnetic storage components such as computer hard disks and thin-film heads. These substrates comprise a non-oxide ceramic base coated with a layer of amorphous, non-stoichiometric silicon carbide, significantly improving their functionality and reliability.
Career Highlights
Irving B Ruppel, Jr. has forged a distinguished career at The Carborundum Company, where he has employed his expertise in materials and invention to foster innovations that push the boundaries of technology. His work with silicon carbide has positioned the company as a leader in high-performance materials for various applications.
Collaborations
Throughout his career, Ruppel has collaborated with esteemed colleagues, including James L Eucker and Robert C Ruhl. These partnerships have further enhanced the development and refinement of cutting-edge materials and methods, contributing to advancements in the field of silicon carbide technologies.
Conclusion
Irving B Ruppel, Jr.'s inventive spirit and commitment to innovation have led to pivotal advancements in silicon carbide technologies. His contributions not only reflect his expertise but also underscore the importance of collaboration in driving forward technological progress. As he continues to push the limits of materials science, Ruppel remains an influential figure in his field, shaping the future of high-performance applications.