Gyeonggi-do, South Korea

Injin Hwang

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Injin Hwang. Retrieved from https://idiyas.com/inventor/injin-hwang-cagb0xg7

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 8.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Injin Hwang: Innovator in Electronic Device Technology

Introduction

Injin Hwang is a notable inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of electronic devices, particularly through his innovative patent that enhances communication technology.

Latest Patents

Hwang holds a patent for an "Electronic device comprising conductive housing and antenna." This invention includes a display, a rear plate made of conductive material, and a side member that surrounds the space between the display and the rear plate. The design incorporates a printed circuit board positioned between the display and the rear plate, along with an antenna pattern that is strategically placed to optimize communication signals. The communication module generates signals that are transmitted to a power feeding unit, showcasing Hwang's ingenuity in electronic design.

Career Highlights

Injin Hwang is associated with Samsung Electronics Co., Ltd., a leading global technology company. His work at Samsung has allowed him to be at the forefront of electronic innovation, contributing to advancements that impact consumer electronics and communication devices.

Conclusion

Injin Hwang's contributions to electronic device technology through his patent demonstrate his role as an innovator in the field. His work continues to influence the development of advanced communication systems.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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