Suwon, South Korea

Injae Bae

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Injae Bae. Retrieved from https://idiyas.com/inventor/injae-bae

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Injae Bae - Innovator in Semiconductor Devices

Introduction

Injae Bae is a notable inventor based in Suwon-si, South Korea. He has made significant contributions to the field of semiconductor devices. Although he currently holds no granted patents, his innovative ideas are reflected in his latest patent applications.

Latest Patent Applications

Injae Bae's recent patent applications focus on advanced semiconductor devices. One application describes a semiconductor device that includes a lower structure with a substrate and a lower transistor. This device features an intermediate structure and an upper structure that contains an upper transistor and a data storage structure. The intermediate structure comprises an intermediate interlayer insulating layer, an intermediate interconnection structure, and an intermediate gap-fill insulating layer.

Another application details a semiconductor device that includes a S/A circuit, bit lines, a gate electrode, and a capacitor on a substrate. The design incorporates multiple lower contact plugs and wirings that are stacked in a specific arrangement to ensure electrical connectivity between the S/A circuit and the bit lines.

Conclusion

Injae Bae's work in semiconductor devices showcases his innovative approach to technology. His latest patent applications reflect his commitment to advancing the field, even as he seeks to secure granted patents in the future.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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