Ingrid J Voors

Title: Ingrid J Voors: Innovator in Semiconductor Manufacturing

Introduction

Ingrid J Voors is a notable inventor based in Eindhoven, Netherlands. She has made significant contributions to the field of semiconductor manufacturing, particularly through her innovative methods that enhance the efficiency and effectiveness of semiconductor devices.

Latest Patents

Ingrid J Voors holds 1 patent for her invention titled "Method of manufacturing a semiconductor device." This patent describes a method that involves a field effect transistor with an insulated gate electrode made of doped polycrystalline silicon. The invention details the formation of source and drain zones in a self-registered manner, utilizing a top layer of metal silicide. A key aspect of her method is the use of an etching mask containing silicon nitride, which allows for the creation of a gate electrode with side edges that are directed transversely to the surface of the semiconductor substrate.

Career Highlights

Ingrid has worked with U.S. Philips Corporation, where she has been able to apply her expertise in semiconductor technology. Her work has contributed to advancements in the manufacturing processes of semiconductor devices, making them more reliable and efficient.

Collaborations

Ingrid has collaborated with Kazimierz Osinski, further enhancing her research and development efforts in the semiconductor field.

Conclusion

Ingrid J Voors is a pioneering inventor whose work in semiconductor manufacturing has paved the way for advancements in technology. Her innovative methods continue to influence the industry and contribute to the development of more efficient semiconductor devices.