Seoul, South Korea

Ingab Kang

This inventor holds 1 USPTO granted patent. Top assignees: Seoul National University, Skhynix Inc.. Active years: 2021.


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: Ingab Kang: Innovator in Memory Technology

Introduction

Ingab Kang is a notable inventor based in Seoul, South Korea. He has made significant contributions to the field of memory technology, particularly with his innovative patent related to row hammer prevention circuits.

Latest Patents

Ingab Kang holds a patent for a row hammer prevention circuit, which is crucial for enhancing memory module performance. This invention includes a memory module that incorporates the row hammer prevention circuit and a memory system that utilizes this module. The row hammer prevention circuit is designed to provide a reference address for performing additional refresh operations. It features a history storage circuit that stores one or more first addresses, an address storage circuit for storing a row address corresponding to an active command, and a control circuit that provides the reference address in response to a refresh command. This innovation addresses the challenges posed by row hammer effects in memory systems.

Career Highlights

Throughout his career, Ingab Kang has worked with prominent organizations, including SK Hynix Inc. and Seoul National University. His experience in these institutions has allowed him to develop and refine his expertise in memory technology.

Collaborations

Ingab Kang has collaborated with talented individuals in his field, including Eojin Lee and Jung Ho Ahn. These partnerships have contributed to the advancement of his research and innovations.

Conclusion

Ingab Kang's contributions to memory technology, particularly through his patent on row hammer prevention circuits, highlight his role as an influential inventor in the industry. His work continues to impact the development of more reliable memory systems.

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