In K Yoo

Title: In K Yoo: Innovator in Ferroelectric Device Technology

Introduction

In K Yoo is a notable inventor based in Blacksburg, VA (US). He has made significant contributions to the field of ferroelectric devices, particularly through his innovative patent that enhances the performance and durability of these devices.

Latest Patents

In K Yoo holds a patent for a "Method of forming multilayered electrodes for ferroelectric devices." This invention involves constructing a ferroelectric device using a bottom electrode made of a conducting oxide, such as RuO.sub.x, on a substrate like silicon or silicon dioxide. A ferroelectric material, specifically lead zirconate titanate (PZT), is deposited on the bottom electrode. An interlayer is formed at the interface between the ferroelectric and the electrode through a reaction between the materials, resulting in Pb.sub.2 Ru.sub.2 O.sub.7-x. A conductive top layer is then deposited over the ferroelectric, which may be a metal or the same material as the bottom electrode, allowing for the formation of another interlayer. This innovative construction method results in devices with reduced degradation due to fatigue, breakdown, and aging.

Career Highlights

Throughout his career, In K Yoo has worked with prominent companies, including Cera M GmbH and Sharp Kabushiki Kaisha Corporation. His experience in these organizations has contributed to his expertise in the development of advanced materials and devices.

Collaborations

In K Yoo has collaborated with notable professionals in his field, including Seshu B Desu and Chi Kong Kwok. These collaborations have further enriched his work and contributed to advancements in ferroelectric technology.

Conclusion

In K Yoo is a distinguished inventor whose work in ferroelectric devices has the potential to significantly impact the technology landscape. His innovative methods and collaborations highlight his commitment to advancing the field.