The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 1996
Filed:
Aug. 10, 1993
Seshu B Desu, Blacksburg, VA (US);
In K Yoo, Blacksburg, VA (US);
Chi K Kwok, Blacksburg, VA (US);
Dilip P Vijay, Blacksburg, VA (US);
Ceram Incorporated, , US;
Sharp Kabushiki Kaisha, , US;
Abstract
A ferroelectric device is constructed using a bottom electrode composed of a conducting oxide such as RuO.sub.x, on a substrate such as silicon or silicon dioxide. A ferroelectric material such as lead zirconate titanate (PZT) is deposited on the bottom electrode, and a conducting interlayer is formed at the interface between the ferroelectric and the electrode. This interlayer is created by reaction between the materials of the ferroelectric and electrode, and in this case would be Pb.sub.2 Ru.sub.2 O.sub.7-x. A conductive top layer is deposited over the ferroelectric. This top layer may be a metal, or it may be the same type of materials as the bottom electrode, in which case another interlayer can be formed at the interface. A device constructed in this manner has the property of lower degradation due to fatigue, breakdown, and aging.