This inventor holds 1 USPTO granted patent and 4 published patent applications. Top assignee: Samsung Electronics Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: In Geon Hwang: Semiconductor Device Innovation.
Introduction
In Geon Hwang is an inventor based in Suwon, South Korea. His patent work concerns semiconductor device structures and manufacturing methods. The provided information lists 1 patent and identifies Samsung Electronics Ltd. as his company.
Latest Patents
Hwang is named on the patent “Semiconductor Device and Method for Manufacturing the Same.” The invention describes a semiconductor device with a lower pattern projecting from a substrate, an insulating pattern and channel pattern above it, and multiple spaced gate structures. It also includes a source/drain pattern connected to the channel pattern. The patent specifies that the source/drain pattern’s lowest portion sits below the bottom surface of the lower insulating pattern, while the gate electrode overlaps that insulating pattern.
Career Highlights
The available information associates Hwang’s semiconductor invention with Samsung Electronics Ltd. His listed patent addresses device architecture and a method for manufacturing the device.
Collaborations
Hyo Jin Kim is identified as Hwang’s coworker. The provided details do not specify whether Kim collaborated on the patent.
Conclusion
In Geon Hwang’s listed patent focuses on semiconductor device design and manufacturing, reflecting work associated with Samsung Electronics Ltd.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile