Leuven, Belgium

Imane Abdellaoui

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Asm IP Holding B.v.. Active years: 2026.

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Imane Abdellaoui: Innovator in Boron Nitride Deposition Methods

Introduction

Imane Abdellaoui is a notable inventor based in Leuven, Belgium. He has made significant contributions to the field of materials science, particularly in the deposition of boron nitride films. His innovative methods have the potential to advance various applications in electronics and materials engineering.

Latest Patents

Imane Abdellaoui holds a patent for a "Method for depositing boron nitride." This patent discloses methods for depositing a boron nitride film on a substrate using a Plasma-Enhanced Chemical Vapor Deposition (PECVD) process. The method involves providing a substrate into a reaction chamber and executing a cyclical deposition process that includes multiple deposition cycles. Each cycle incorporates a boron precursor and a deposition plasma gas, showcasing a sophisticated approach to material deposition.

Career Highlights

Abdellaoui is currently associated with Asm IP Holding B.V., where he continues to develop and refine his innovative techniques. His work is characterized by a commitment to advancing the understanding and application of boron nitride in various technological fields.

Collaborations

Imane Abdellaoui collaborates with talented professionals such as Jihee Jeon and Miguel Sérgio De Abreu Neto. These collaborations enhance the research and development efforts within his field, fostering innovation and progress.

Conclusion

Imane Abdellaoui's contributions to the field of boron nitride deposition are noteworthy. His patent and ongoing work at Asm IP Holding B.V. reflect his dedication to innovation in materials science. His efforts are paving the way for future advancements in technology.

Profile summary based on public USPTO records.
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