Suwon, South Korea

Iljeong Heo

This inventor holds 1 USPTO granted patent and 4 published patent applications. Top assignees: Korea Institute of Machinery & Materials, Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Iljeong Heo. Retrieved from https://idiyas.com/inventor/iljeong-heo-m2vye7x0

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Iljeong Heo and His Work in Substrate Processing

Introduction

Iljeong Heo is an inventor based in Suwon, South Korea. His work includes a patented scrubber design for processing waste gas in substrate manufacturing systems. He has 1 patent listed in the information provided.

Latest Patents

Heo’s patent, “Scrubber, Substrate Processing System Including the Same, and Substrate Processing Method Using the Same,” describes a system that combines plasma and combustion processing to treat waste gas.

The scrubber includes a plasma processing unit with a plasma-generating device and a power-generating device, as well as a combustion processing unit with a combustor that forms a flame. A connection conduit supplies waste gas to the plasma-generating device, where the gas is used to form plasma. The plasma and combustion units provide separate reaction spaces: one for plasma and another for the flame. A back-end processing unit connects to the combustion unit.

Career Highlights

The information provided associates Heo with Samsung Electronics Ltd. and the Korea Institute of Machinery & Materials. His patent focuses on waste-gas treatment technology for substrate processing systems.

Collaborations

Mukyeong Kim and Hyun Seok Kim are identified as Heo’s coworkers.

Conclusion

Iljeong Heo’s listed invention combines plasma and combustion processes to treat waste gas, reflecting his work in substrate-processing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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