Suwon, South Korea

Ilho Myeong

This inventor holds 1 USPTO granted patent and 11 published patent applications. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Ilho Myeong - Innovator in Semiconductor Technology

Introduction

Ilho Myeong is an inventor based in Suwon-si, South Korea. He is focused on developing advanced semiconductor devices. Although he currently holds no granted patents, his work in the field is noteworthy.

Latest Patent Applications

Ilho Myeong has submitted several innovative patent applications. One of his latest applications is for a semiconductor device that includes a channel layer on a substrate, a first interface insulation layer, and a ferroelectric layer sequentially stacked on the channel layer. This device also features a nitride charge trapping layer that contacts the ferroelectric layer and a gate pattern disposed on the nitride charge trapping layer. The nitride charge trapping layer is designed to include at least silicon and nitrogen, with a concentration of silicon that varies depending on its position within the layer.

Another significant application is for semiconductor devices and data storage systems that include a source structure and a stack structure with interlayer insulating layers and gate electrodes. This stack structure is arranged in a first direction perpendicular to the upper surface of the source structure. The application details channel structures that are disposed in channel holes, which penetrate the stack structure. These channel structures consist of a gate dielectric structure and a channel layer, along with a back gate structure that divides each channel structure into first and second channel portions.

Conclusion

Ilho Myeong is making strides in semiconductor technology through his innovative patent applications. His work has the potential to contribute significantly to advancements in the field.

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