Suwon, South Korea

Il Ho Myeong

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Il Ho Myeong. Retrieved from https://idiyas.com/inventor/il-ho-myeong

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0

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Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Il Ho Myeong: Semiconductor Memory Device Innovation

Introduction

Il Ho Myeong is an inventor associated with Suwon, South Korea, and Samsung Electronics Ltd. His patent work concerns semiconductor memory technology.

Latest Patents

The provided information lists one patent for Myeong: Semiconductor Memory Device and Electronic System Including the Same. The invention describes a semiconductor memory device with a substrate and a layered mold structure containing gate electrodes and insulating films. A channel structure passes through the mold structure and includes a semiconductor pattern and a ferroelectric film. The patent also describes a channel pad and bit line contact, with specified relationships between the ferroelectric film, uppermost gate electrode, and differently sized portions of the channel pad. Myeong is credited with 1 patent in the supplied data.

Career Highlights

Myeong’s listed patent reflects work on memory-device architecture, including the integration of ferroelectric material into a channel structure. The supplied information identifies Samsung Electronics Ltd. as his company.

Collaborations

The provided data names Su Seong Noh and Seung Min Lee as Myeong’s coworkers. It does not specify their roles in the patent or describe particular collaborations.

Conclusion

Il Ho Myeong’s listed invention focuses on semiconductor memory-device design and its structural components, representing his patent activity associated with Samsung Electronics Ltd.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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