This inventor holds 1 USPTO granted patent. Top assignee: Siemens Aktiengesellschaft. Active years: 1995.
Company Filing History:
Years Active: 1995
Title: Innovations by Ignacio Ulacia
Introduction
Ignacio Ulacia is a notable inventor based in Guadalajara, Mexico. He has made significant contributions to the field of materials science, particularly in the area of semiconductor manufacturing. His innovative approach has led to the development of a unique method for the selective deposition of tungsten on silicon surfaces.
Latest Patents
Ignacio Ulacia holds a patent for a "Method for the selective deposition of tungsten on a silicon surface." This method involves providing a silicon surface with a masking structure, such as SiO₂. The deposition process is carried out in a chemical vapor deposition (CVD) reactor using a mixture of process gases. The innovative aspect of this method is that the masking structure remains essentially free of tungsten. The process parameters, including temperature, pressure, and flow-through rates, are meticulously determined by solving an equation system that incorporates conservation laws for mass, chemical constituents, momentum, and energy. This ensures optimal conditions for selective deposition while considering the effects of thermodiffusion and multi-constituent diffusion.
Career Highlights
Ignacio Ulacia is currently associated with Siemens Aktiengesellschaft, a leading global technology company. His work at Siemens has allowed him to further explore and refine his innovative techniques in semiconductor processing. His contributions have been instrumental in advancing the capabilities of the company in this competitive field.
Collaborations
Ignacio collaborates with Christoph Werner, a fellow innovator in the field. Their partnership has fostered a productive environment for research and development, leading to advancements in their respective areas of expertise.
Conclusion
Ignacio Ulacia's work exemplifies the spirit of innovation in the field of semiconductor technology. His patented method for selective tungsten deposition showcases his commitment to advancing materials science. Through his career at Siemens and collaborations with other experts, he continues to contribute to significant technological advancements.