Company Filing History:
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Years Active: 1991-1993
Title: Ichiro Yamashita: Innovator in Silicon Crystal Growth
Introduction
Ichiro Yamashita is a notable inventor based in Omiya, Japan, recognized for his contributions to the field of silicon crystal growth. With a total of two patents to his name, he has made significant advancements in the technology used for producing high-quality silicon single crystals.
Latest Patents
Yamashita's latest patents include an "Apparatus for Growing Silicon Crystals" and a "Method and Apparatus for Growing Silicon Crystals." The apparatus patent describes a system that includes a crucible containing a silicon melt, a furnace, a pulling mechanism, and a cooling shell. This innovative design allows for the efficient cooling of silicon single crystals from 1,050 degrees to 850 degrees Celsius in no more than 140 minutes. The method patent outlines a process for immersing a seed crystal in a silicon melt and pulling it to grow a silicon single crystal, ensuring that the dwelling time remains under 140 minutes.
Career Highlights
Throughout his career, Ichiro Yamashita has worked with prominent companies such as Mitsubishi Kinzoku Kabushiki Kaisha and Japan Silicon Co., Ltd. His experience in these organizations has contributed to his expertise in silicon crystal technology and innovation.
Collaborations
Yamashita has collaborated with notable coworkers, including Koutaro Shimizu and Yoshiaki Banba. Their joint efforts have further advanced the field of silicon crystal growth.
Conclusion
Ichiro Yamashita's work in the development of methods and apparatuses for growing silicon crystals has made a significant impact on the industry. His innovative approaches continue to influence the production of high-quality silicon materials.