V.ae butted.rl.o slashed.se, Denmark

Ib Johannsen

This inventor holds 1 USPTO granted patent. Top assignee: Nkt Research Center A/s. Active years: 1998.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ib Johannsen. Retrieved from https://idiyas.com/inventor/ib-johannsen-cd5g2bd8

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 9(Granted Patents)


Company Filing History:


Years Active: 1998

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1 patent (USPTO):Explore Patents

Title: Ib Johannsen: Innovator in Electroactive Materials

Introduction

Ib Johannsen is a notable inventor based in Denmark, recognized for his contributions to the field of electroactive materials. His innovative work has led to the development of a unique process for the preparation of these materials, which has significant implications in various technological applications.

Latest Patents

Ib Johannsen holds a patent for "Electroactive materials, a process for their preparation." This patent showcases his expertise and commitment to advancing materials science. He has successfully secured 1 patent that highlights his innovative approach in this specialized area.

Career Highlights

Johannsen is currently affiliated with NKT Research Center A/S, where he continues to push the boundaries of research and development in electroactive materials. His role at the research center allows him to collaborate with other experts in the field and contribute to groundbreaking advancements.

Collaborations

One of his notable coworkers is Mikkel Jo Slashedrgensen, with whom he collaborates on various projects. Their combined expertise enhances the research output at NKT Research Center A/S.

Conclusion

Ib Johannsen's work in electroactive materials exemplifies the spirit of innovation and dedication to scientific advancement. His contributions are paving the way for future developments in this exciting field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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