This inventor holds 1 USPTO granted patent. Top assignee: Sk Siltron Css, LLC. Active years: 2025.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2025
Title: Ian Manning - Innovator in SiC Crystal Growth Technology
Introduction
Ian Manning is a notable inventor based in Bay City, MI (US). He has made significant contributions to the field of crystal growth technology, particularly with his innovative approach to silicon carbide (SiC) crystal growth.
Latest Patents
Manning holds a patent for a SiC crystal growth apparatus and method. This invention discloses a SiC crystal growth apparatus that includes a reaction cell situated within a vacuum furnace. The design allows for the growth of SiC crystals in the reaction cell, which is configured to have a source located in the lower region of an area defined by a crucible and a cover. A seed is positioned below the cover, and a filter is incorporated to eliminate particles from the gas supplied from the source. The filter consists of three layers, each with specific through holes that form a face-centered cubic structure.
Career Highlights
Ian Manning is currently employed at SK Siltron CSS, LLC, where he continues to advance his research and development efforts in crystal growth technologies. His work has been instrumental in enhancing the efficiency and quality of SiC crystal production.
Collaborations
Manning collaborates with Andrey Soukhojak, contributing to the innovative projects at their company.
Conclusion
Ian Manning's contributions to SiC crystal growth technology exemplify his dedication to innovation in the field. His patent and ongoing work at SK Siltron CSS, LLC highlight his role as a key figure in advancing crystal growth methodologies.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile