Portland, OR, United States of America

Ian Andrew Guyler


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2018

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1 patent (USPTO):Explore Patents

Title: Ian Andrew Guyler: Innovating Gate-Level Simulation Correction Techniques

Introduction

Ian Andrew Guyler, located in Portland, OR, has made strides in the field of electronic design automation. With his innovative patent, he addresses a significant challenge in gate-level simulation and emulation.

Latest Patents

Ian holds a patent for "Methods and systems for correcting X-pessimism in gate-level simulation or emulation." This patent outlines techniques that enhance gate-level simulations by efficiently identifying and correcting X-pessimism on-the-fly. His invention involves using static Boolean analysis to pinpoint gates in the simulated hardware where X-pessimism could occur, thus allowing for real-time corrections. Ian's approach aims to improve performance and scalability in detecting and correcting X-pessimism, offering a substantial advancement over existing methods.

Career Highlights

Ian Andrew Guyler is currently associated with Real Intent, Inc., a company known for its focus on electronic design automation. His contributions to the field have set a benchmark for future innovations, particularly in the efficiency of handling gate-level simulations.

Collaborations

At Real Intent, Inc., Ian works alongside talented individuals like Pranav N Ashar and Sanjeev Mahajan. Their collaborative efforts contribute to the company's reputation for groundbreaking advancements in simulation technology.

Conclusion

Ian Andrew Guyler stands out as a notable inventor in the realm of gate-level simulation technologies. His patented methods not only advance the understanding of X-pessimism but also pave the way for enhanced innovation in electronic design automation. Ian's work reflects a commitment to improving simulation accuracy and efficiency, reinforcing the importance of innovations in this sector.

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