Milngavie, United Kingdom

Iain G Thayne

This inventor holds 1 USPTO granted patent. Top assignee: Freescale Semiconductor,inc.. Active years: 2010.


% Patents Active = 100.0

Average Co-Inventor Count = 9.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2010

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1 patent (USPTO):Explore Patents

Title: Iain G Thayne: Innovator in Semiconductor Fabrication

Introduction

Iain G Thayne is a notable inventor based in Milngavie, GB. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of III-V MOSFET devices. His innovative work has led to the development of a unique semiconductor fabrication process that enhances device performance.

Latest Patents

Iain G Thayne holds 1 patent for his invention titled "III-V MOSFET fabrication and device." This patent describes a semiconductor fabrication process that includes forming a gate dielectric layer over a substrate containing a III-V semiconductor compound. The process involves patterning the gate dielectric layer to create a structure with substantially vertical sidewalls. A metal contact structure is then formed, which is laterally displaced from the gate dielectric structure, defining a gap between the two. The wafer undergoes heat treatment, causing the migration of metal elements to form an alloy region in the substrate. This innovative approach enhances the performance and reliability of semiconductor devices.

Career Highlights

Iain G Thayne is currently employed at Freescale Semiconductor, Inc., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the capabilities of III-V semiconductor devices, which are critical for high-performance applications.

Collaborations

Throughout his career, Iain has collaborated with esteemed colleagues, including Richard J Hill and Jonathan K Abrokwah. These collaborations have fostered an environment of innovation and have contributed to the success of various projects within the semiconductor industry.

Conclusion

Iain G Thayne's contributions to semiconductor fabrication exemplify the spirit of innovation in technology. His patent on III-V MOSFET fabrication showcases his expertise and commitment to advancing the field. Through his work at Freescale Semiconductor, Inc., he continues to make a significant impact on the industry.

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