I-Jung Wang

Title: I-Jung Wang: Innovator in Spin-Orbit Magnetic Devices

Introduction

I-Jung Wang is a prominent inventor based in Zhudong, Taiwan. He has made significant contributions to the field of magnetic devices, holding a total of six patents. His work focuses on the development of advanced technologies that enhance the performance of magnetic devices.

Latest Patents

Wang's latest patents include innovative designs for in-plane magnetized spin-orbit magnetic devices. One of his inventions features a heavy metal layer, an antiferromagnetic layer, and a magnetic tunnel junction. The antiferromagnetic layer is strategically placed on the heavy metal layer, while the magnetic tunnel junction consists of a free layer, a barrier layer, and a pinned layer. The unique film surface shape of the free layer is a rounded rectangle, which contributes to the device's functionality. Another patent describes a similar in-plane magnetized spin-orbit magnetic device, which includes a heavy metal layer, an upper electrode, and a magnetic tunnel junction. In this design, the free layer has a larger film plane area compared to the pinned layer, with a preset angle between their long axis directions.

Career Highlights

I-Jung Wang is affiliated with the Industrial Technology Research Institute, where he continues to push the boundaries of innovation in magnetic technology. His expertise and dedication have positioned him as a key figure in his field.

Collaborations

Wang has collaborated with notable colleagues, including Jeng-Hua Wei and Hsin-Han Lee, to further advance research and development in magnetic devices.

Conclusion

I-Jung Wang's contributions to the field of spin-orbit magnetic devices exemplify his innovative spirit and commitment to technological advancement. His patents reflect a deep understanding of magnetic technology and its applications.