Company Filing History:
Years Active: 2011
Title: I Hsuan Peng: Innovator in Polysilicon Film Fabrication
Introduction: I Hsuan Peng is a notable inventor based in Hsinchu County, Taiwan. He has made significant contributions to the field of materials science, particularly in the fabrication of polysilicon films. His innovative methods have the potential to enhance various applications in electronics and semiconductor industries.
Latest Patents: I Hsuan Peng holds a patent for a "Method for fabricating polysilicon film." This method involves directly depositing a polysilicon film at low temperatures. The process includes providing a substrate and executing a sequential deposition process that consists of first and second deposition steps. In the first step, a first bias voltage is applied to the substrate, utilizing plasma chemical vapor deposition to form a first polysilicon sub-layer. The second step involves applying a second bias voltage to create a second polysilicon sub-layer on the first. The distinct bias voltages used in each step contribute to the unique properties of the resulting polysilicon film. He has 1 patent to his name.
Career Highlights: I Hsuan Peng is affiliated with the Industrial Technology Research Institute, where he continues to advance research in semiconductor technologies. His work is pivotal in developing efficient methods for material fabrication, which are crucial for modern electronic devices.
Collaborations: Some of his notable coworkers include Chih-Yuan Tseng and Yung-Hui Yeh. Their collaborative efforts contribute to the innovative research environment at the Industrial Technology Research Institute.
Conclusion: I Hsuan Peng's contributions to polysilicon film fabrication exemplify the importance of innovation in technology. His patented methods are set to influence the future of semiconductor manufacturing significantly.