The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2011
Filed:
May. 06, 2008
Chih-yuan Tseng, Hsinchu, TW;
I Hsuan Peng, Hsinchu County, TW;
Yung-hui Yeh, Hsinchu, TW;
Jung-jie Huang, Yulin County, TW;
Cheng-ju Tsai, Taipei, TW;
Chih-Yuan Tseng, Hsinchu, TW;
I Hsuan Peng, Hsinchu County, TW;
Yung-Hui Yeh, Hsinchu, TW;
Jung-Jie Huang, Yulin County, TW;
Cheng-Ju Tsai, Taipei, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A method of directly depositing a polysilicon film at a low temperature is disclosed. The method comprises providing a substrate and performing a sequential deposition process. The sequential deposition process comprises first and second deposition steps. In the first deposition step, a first bias voltage is applied to the substrate, and plasma chemical vapor deposition is utilized to form a first polysilicon sub-layer on the substrate. In the second deposition step, a second bias voltage is applied to the substrate, and plasma chemical vapor deposition is utilized to form a second polysilicon sub-layer on the first sub-layer. The first and second sub-layers constitute the polysilicon film, and the first bias voltage differs from the second bias voltage.