I-Chung Deng

Title: I-Chung Deng: Innovator in Refractory Metal Production

Introduction

I-Chung Deng is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of materials science, particularly in the production of refractory metals. His innovative approach has the potential to enhance the manufacturing processes of integrated circuits.

Latest Patents

I-Chung Deng holds a patent for the "Production of a refractory metal by chemical vapor deposition of a bilayer-stacked tungsten metal." This patent describes a process that involves depositing a bilayer-stacked tungsten metal in a single chamber without breaking the vacuum. The method begins with the deposition of an amorphous-like tungsten layer to improve thermal stability and prevent the diffusion of fluorine atoms. Following this, a nitridizing treatment is applied to enhance the barrier properties and thermal stability of the tungsten. Finally, conventional selective chemical vapor deposited tungsten is added, resulting in a significant increase in thermal stability and a reduction in resistance compared to tungsten disilicide. This innovative process is particularly beneficial for the manufacture of extremely large integrated circuits.

Career Highlights

I-Chung Deng is affiliated with the National Science Council of the Republic of China, where he continues to advance research in materials science. His work has garnered attention for its practical applications in the semiconductor industry.

Collaborations

I-Chung Deng has collaborated with notable colleagues, including Kow-Ming Chang and Ta-Hsun Yeh, contributing to various research projects and innovations in the field.

Conclusion

I-Chung Deng's contributions to the production of refractory metals through innovative chemical vapor deposition techniques highlight his role as a significant inventor in the materials science domain. His work not only enhances thermal stability in manufacturing but also paves the way for advancements in integrated circuit technology.