The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2001
Filed:
May. 17, 1999
National Science Council of Republic of China, Taipei, TW;
Abstract
Provided a process for producing a refractory metal by chemical vapor deposition of a bilayer-stacked tungsten metal by depositing a bilayer-stacked tungsten metal in a same chamber in the manner of not breaking the vacuum therein. Firstly, a layer of amorphous-like tungsten is deposited to increase thermal stability and to prevent diffusion of fluorine atom. Next, a nitridizing treatment is performed thereon to promote further the barrier property and thermal stability of the amorphous-like tungsten. Finally, conventional selective chemical vapor deposited tungsten having low is deposited on the amorphous-like tungsten. Through the deposition of bilayer tungsten according to the process of the invention, thermal stability of conventional selective chemical vapor deposited tungsten can be increased greatly. For the manufacture of a extremely large integrated circuit, stacked tungsten not only can prevent fluorine atom from diffusing downwardly in the course of deposition, but also can increase thermal stability, and furthermore, the resistance thereof is much lower that that of tungsten disilicide. Accordingly, the process of the invention is indeed a technique having high potential.