Hsinchu, Taiwan

I-Cheng Tung

This inventor holds 3 USPTO granted patents. Top assignees: National Taiwan University, Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2023-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: I-Cheng Tung. Retrieved from https://idiyas.com/inventor/i-cheng-tung-y1yn2sya

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2023-2026

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3 patents (USPTO):Explore Patents

Title: Biography of I-Cheng Tung

Introduction: I-Cheng Tung is a prominent inventor based in Hsinchu, Taiwan, known for his contributions to the field of magnetic tunnel junction structures and related methods. With a focus on spin-orbit torque MRAM structures, Tung has made significant advancements in the realm of memory technology.

Latest Patents: I-Cheng Tung holds a patent for "Magnetic tunnel junction structures and related methods." This patent discloses innovative spin-orbit torque MRAM structures, which include a SOT channel comprising multiple heavy metal layers and dielectric dusting layers. These layers are strategically arranged to enhance the performance of MRAM devices.

Career Highlights: Throughout his career, Tung has worked with notable organizations, including Taiwan Semiconductor Manufacturing Company Ltd. and National Taiwan University. His experience in these institutions has allowed him to develop cutting-edge technologies and contribute to the advancement of semiconductor and memory technologies.

Collaborations: I-Cheng Tung has collaborated with esteemed colleagues such as Zong-You Luo and Ya-Jui Tsou. These partnerships have fostered a collaborative environment that has led to innovative research and development in the field of MRAM structures.

Conclusion: I-Cheng Tung's work in magnetic tunnel junction structures has positioned him as a key figure in the field of memory technology. His innovative approaches and collaborations continue to influence advancements in semiconductor research and development.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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