I-Chen Yang

Title: Innovations by Inventor I-Chen Yang from Yilan County

Introduction

I-Chen Yang is a noted inventor based in Yilan County, Taiwan. With a remarkable portfolio of three patents, Yang has significantly contributed to advancements in semiconductor technology, particularly in techniques pertaining to silicon growth.

Latest Patents

One of Yang’s latest patents involves "Selective Silicon Growth for Gapfill Improvement," which relates to the formation of a gate layer in high aspect ratio trenches using a cyclic deposition-treatment process. This innovative method encompasses subjecting a substrate surface with at least one feature to a film deposition process, ensuring a conformal film is formed over the bottom surface and along the sidewall surfaces of the feature. Additionally, the process includes treating the substrate surface to create halogen surface layers or halogen-terminated layers on the conformal film at the upper parts of the sidewall surfaces. The method is designed to be performed sequentially, filling the feature effectively through repeated cycles of deposition and treatment.

Career Highlights

I-Chen Yang is currently employed at Taiwan Semiconductor Manufacturing Company Limited (TSMC), a leader in the semiconductor industry. His work there focuses on state-of-the-art techniques that enhance manufacturing processes and efficiency in silicon growth. Yang's contributions are crucial to TSMC's ongoing innovation in the highly competitive field of semiconductor fabrication.

Collaborations

Throughout his career, Yang has collaborated with talented professionals such as De-Wei Yu and Chien-Hao Chen, leveraging their expertise to push the boundaries of semiconductor technology. Their joint efforts have led to valuable innovations that benefit the industry as a whole.

Conclusion

I-Chen Yang’s inventive contributions and ongoing work at Taiwan Semiconductor Manufacturing Company Limited solidify his position as a key player in the realm of semiconductor innovations. His focus on improving gapfill techniques through selective silicon growth outlines the importance of innovation in achieving technological advancement in modern electronics.