Company Filing History:
Years Active: 2024-2025
Title: Hyunkwang Shin: Innovator in Power MOSFET Technology
Introduction
Hyunkwang Shin is a notable inventor based in Cheongju-si, South Korea. He has made significant contributions to the field of power MOSFET technology, holding a total of 2 patents. His work focuses on enhancing the efficiency and performance of MOSFET devices, which are crucial in various electronic applications.
Latest Patents
Hyunkwang Shin's latest patents include advancements in split gate power MOSFET technology. The split gate MOSFET he developed features a low capacitance between the gate electrode and the source electrode. This innovation includes a trench MOSFET design that consists of a substrate, a gate trench formed on the substrate, and a sidewall insulating layer on the gate trench's sidewall. Additionally, it incorporates a source electrode surrounded by the sidewall insulating layer, a first upper electrode above the source electrode, and a first inter-electrode insulating layer between the source electrode and the first upper electrode. Furthermore, a second upper electrode is formed adjacent to the first upper electrode, surrounding it, along with an interlayer insulating layer on both upper electrodes.
Career Highlights
Throughout his career, Hyunkwang Shin has worked with prominent companies in the semiconductor industry. He has been associated with Sk Keyfoundry Inc. and Key Foundry Co., Ltd., where he has contributed to the development of innovative technologies in semiconductor manufacturing.
Collaborations
Due to space constraints, the collaborations section has been omitted.
Conclusion
Hyunkwang Shin's contributions to power MOSFET technology demonstrate his commitment to innovation in the semiconductor field. His patents reflect a deep understanding of electronic device efficiency, positioning him as a key figure in advancing this technology.