Suwon-si, South Korea

Hyunjun Ahn

USPTO Granted Patents = 1 

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Hyunjun Ahn: Innovator in Semiconductor Technology

Introduction

Hyunjun Ahn is a prominent inventor based in Suwon-si, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods of atomic layer deposition.

Latest Patents

Hyunjun Ahn holds a patent for a "Method of depositing atomic layer and method of manufacturing semiconductor device." This patent describes a method of depositing an atomic layer of a metal-containing film that includes multiple deposition cycles. Each cycle involves adsorbing a hydrogen (H)-containing compound on a wafer surface, treating the wafer with hydrogen (H) gas, and providing a metal precursor to react with the H-containing compound, ultimately forming the metal-containing film. He has 1 patent to his name.

Career Highlights

Hyunjun Ahn is currently employed at Samsung Electronics Co., Ltd., a leading company in the electronics and semiconductor industry. His work at Samsung has positioned him as a key player in advancing semiconductor manufacturing techniques.

Collaborations

He has collaborated with notable colleagues, including Hongtaek Lim and Kyoungwoo Hong, contributing to various projects that enhance semiconductor technology.

Conclusion

Hyunjun Ahn's innovative work in atomic layer deposition and semiconductor manufacturing showcases his expertise and commitment to advancing technology in this critical field. His contributions are vital for the ongoing development of semiconductor devices.

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