The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Mar. 01, 2023
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Hyunjun Ahn, Suwon-si, KR;
Hongtaek Lim, Suwon-si, KR;
Kyoungwoo Hong, Suwon-si, KR;
Hanhim Kang, Suwon-si, KR;
Yeongyeop Song, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); H01L 21/02167 (2013.01); H01L 21/0217 (2013.01); H01L 21/02178 (2013.01); H01L 21/02181 (2013.01); H01L 21/02183 (2013.01); H01L 21/02186 (2013.01); H01L 21/02189 (2013.01); H01L 21/02208 (2013.01); H01L 21/28506 (2013.01); H01L 21/32051 (2013.01);
Abstract
A method of depositing an atomic layer of a metal-containing film including a plurality of deposition cycles is provided. Each of the plurality of deposition cycles may include adsorbing a hydrogen (H)-containing compound on a wafer surface in a chamber, treating a wafer on which the H-containing compound is adsorbed with hydrogen (H) gas, and providing a metal precursor to the wafer to react with the H-containing compound to form the metal-containing film.