HyunJin Shin

Title: HyunJin Shin: Innovator in Thin Film Transistor Technology

Introduction

HyunJin Shin is a notable inventor based in Anyang-si, South Korea. He has made significant contributions to the field of display technology, particularly through his innovative work on thin film transistors. His expertise and inventions have positioned him as a key figure in the industry.

Latest Patents

HyunJin Shin holds a patent for a thin film transistor and display device. This invention includes a thin film transistor that features a gate electrode, an active layer, a source electrode, and a drain electrode on a non-pixel area of a substrate. The design incorporates a first insulating layer that insulates the gate electrode from the source and drain electrodes, along with a second insulating layer that covers the source and drain electrodes. Notably, these insulating layers are configured to avoid extending into the pixel area of the substrate, which helps to reduce potential oscillation of transmittance based on the viewing angle when specific light passes through the pixel area. This innovation enhances the performance and reliability of display devices.

Career Highlights

HyunJin Shin is currently associated with LG Display Co., Ltd., a leading company in the display technology sector. His work at LG Display has allowed him to contribute to advancements in display technologies that are widely used in various electronic devices.

Collaborations

HyunJin has collaborated with talented coworkers, including SangGul Lee and SangHee Yu, who have also contributed to the field of display technology. Their teamwork has fostered an environment of innovation and creativity.

Conclusion

HyunJin Shin's contributions to thin film transistor technology exemplify his commitment to advancing display technology. His innovative patent and collaboration with skilled professionals highlight his significant role in the industry.