Suwon, South Korea

Hyunho Noh

This inventor holds 2 USPTO granted patents and 3 published patent applications. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyunho Noh. Retrieved from https://idiyas.com/inventor/hyunho-noh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 2 

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2026

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2 patents (USPTO):Explore Patents

Title: Hyunho Noh and Integrated Circuit Device Patents

Introduction

Hyunho Noh is an inventor based in Suwon, South Korea, and is associated with Samsung Electronics. His patent work includes integrated circuit device designs, and he holds 2 patents.

Latest Patents

Noh’s latest listed patent concerns an integrated circuit device with an insulating structure, a source/drain region, semiconductor sheets, channel regions, and gate lines. Its backside contact structure passes through the insulating structure to contact the bottom of the source/drain region. The contact has two portions with widths that change in opposite directions toward the source/drain region.

The supplied data lists this same integrated circuit device description twice. It highlights a design focused on the geometry of backside electrical contacts within a semiconductor structure.

Career Highlights

Noh’s listed work reflects contributions to integrated circuit design at Samsung Electronics. The patent description addresses structural features that connect a source/drain region from the backside of the device.

Collaborations

Noh’s listed coworkers include Ilgyou Shin and Sangyong Kim. The provided information does not specify their roles in the patent or the nature of their collaboration.

Conclusion

Hyunho Noh is a Suwon-based inventor associated with Samsung Electronics whose listed patent work focuses on integrated circuit structures and backside contacts.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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