Hyungrok Oh

Title: Hyungrok Oh: Innovator in Magnetic Memory Technology

Introduction

Hyungrok Oh is a prominent inventor based in Yongin-si, South Korea. He has made significant contributions to the field of magnetic memory devices, holding a total of 2 patents. His work focuses on advancing memory technology, which is crucial for modern electronic devices.

Latest Patents

Hyungrok Oh's latest patents include innovative designs for magnetic memory devices. The first patent describes magnetic memory devices that consist of at least one memory cell and a reference cell on a substrate. The memory cells feature a first base magnetic layer, a free layer, and a first tunnel barrier layer positioned between the first base magnetic layer and the free layer. The reference memory cell is designed with a second base magnetic layer, a reference magnetic layer, and a second tunnel barrier layer. Notably, the magnetic direction of the reference magnetic layer is substantially perpendicular to that of the free layer.

The second patent focuses on resistance-variable memory devices and their associated read methods. This device includes memory cells, a high voltage circuit, a precharging circuit, a bias circuit, and a sense amplifier. Each memory cell incorporates a resistance-variable material and a diode connected to a bitline. The high voltage circuit is responsible for providing a high voltage from a power source, while the precharging circuit elevates the bitline to this high voltage after charging it to the power source voltage. The bias circuit supplies a read current to the bitline using the high voltage, and the sense amplifier compares the bitline's voltage with a reference voltage.

Career Highlights

Hyungrok Oh is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to be at the forefront of innovation in memory technology, contributing to the development of advanced electronic components.

Collaborations

Throughout his career, Hyungrok Oh has collaborated with notable colleagues, including Junsoo Bae and Dueung Kim. These collaborations have further enhanced his research and development efforts in the field of magnetic memory devices.

Conclusion

Hyungrok Oh's contributions to magnetic memory technology exemplify his innovative spirit and dedication to advancing electronic devices. His patents reflect a deep understanding of memory systems, positioning him as a key figure in the industry.