Samsung Electronics Co., Ltd.

Hyungrok Oh

Woo-Yeong Cho

Sechung Oh

Kwangjin Lee

Yu-hwan Ro

Dueung Kim

Beakhyung Cho

Byunggil Choi

Junsoo Bae

Magnetic memory devices are provided, the devices include at least memory cell and a reference cell on a substrate. The memory cells include a first base magnetic layer, a free layer, and a first tunnel barrier layer between the first base magnetic layer and free layer. The reference memory cell includes a second base magnetic layer, a reference magnetic layer, and a second tunnel barrier layer between the second base magnetic layer and reference magnetic layer. The reference magnetic layer has a magnetic direction substantially perpendicular to that of the free layer.

Magnetic memory devices

A resistance-variable memory device includes memory cells, a high voltage circuit, a precharging circuit, a bias circuit, and a sense amplifier. Each memory cell may, for example, include a resistance-variable material and a diode connected to a bitline. The high voltage circuit provides a high voltage from a power source. The precharging circuit raises the bitline up to the high voltage after charging the bitline up to the power source voltage. The bias circuit supplies a read current to the bitline using the high voltage. The sense amplifier compares a voltage of the bitline with a reference voltage by means of the high voltage.

Resistance variable memory devices and read methods thereof

Growing community of inventors

Yongin-si, South Korea

Hyungrok Oh