Suwon-si, South Korea

Hyun-Seok Jang


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Hyun-Seok Jang

Introduction

Hyun-Seok Jang is a prominent inventor based in Suwon-si, South Korea. He is known for his significant contributions to the field of semiconductor technology, particularly in the development of non-volatile memory devices. His work has been instrumental in advancing the capabilities of memory storage solutions.

Latest Patents

Hyun-Seok Jang holds a patent for a "Method of fabricating non-volatile memory device having separate charge trap patterns." This innovative method involves forming an isolation trench in a semiconductor substrate, which defines first and second fins. The process includes forming an isolation layer that partially fills the trench, creating first and second charge trap patterns that cover parts of the fins. Additionally, a control gate electrode is formed to cover the charge trap patterns and cross the fins. This patent showcases his expertise in enhancing memory device fabrication techniques. He has 1 patent to his name.

Career Highlights

Hyun-Seok Jang is associated with Samsung Electronics Co., Ltd., a leading global technology company. His role at Samsung has allowed him to work on cutting-edge technologies that shape the future of electronics and memory devices. His contributions have not only advanced the company's product offerings but have also set new standards in the industry.

Collaborations

Throughout his career, Hyun-Seok Jang has collaborated with notable colleagues, including Ju-Wan Lim and Byung-Hong Chung. These collaborations have fostered an environment of innovation and creativity, leading to the development of groundbreaking technologies in the semiconductor field.

Conclusion

Hyun-Seok Jang's work exemplifies the spirit of innovation in the semiconductor industry. His contributions, particularly in non-volatile memory device fabrication, highlight the importance of research and development in advancing technology. His achievements continue to inspire future innovations in the field.

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