The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2011
Filed:
May. 11, 2009
Ju-wan Lim, Seoul, KR;
Hyun-seok Jang, Suwon-si, KR;
Byung-hong Chung, Seoul, KR;
Ki-hyun Hwang, Seongnam-si, KR;
Sang-ryol Yang, Hwaseong-si, KR;
Ju-Wan Lim, Seoul, KR;
Hyun-Seok Jang, Suwon-si, KR;
Byung-Hong Chung, Seoul, KR;
Ki-Hyun Hwang, Seongnam-si, KR;
Sang-Ryol Yang, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of fabricating a non-volatile memory device includes forming an isolation trench in a semiconductor substrate, and the isolation trench defines first and second fins. The method further includes forming an isolation layer partially filling the isolation trench, forming first and second charge trap patterns respectively covering parts of the first and second fins projecting from the isolation layer, and forming a control gate electrode covering the first and second charge trap patterns and crossing the first and second fins.