Icheon-si, South Korea

Hyun Jun Park

This inventor holds 1 USPTO granted patent and 4 published patent applications. Top assignee: Skhynix Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyun Jun Park. Retrieved from https://idiyas.com/inventor/hyun-jun-park-5vs5yclv

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Hyun Jun Park: Inventor in Semiconductor Device Technology

Introduction

Hyun Jun Park is an inventor associated with Icheon-si, South Korea, and SK hynix Inc. His listed patent concerns applying stress to transistors in an electronic device.

Latest Patents

Park is credited with 1 patent: “Electronic Device and Method That Applies Stress to Transistors.” The invention describes circuitry that controls stress and measurement processes for multiple transistors. During the stress process, the circuit supplies the transistors with source and ground voltages. During measurement, it connects their current paths, and separate control circuitry can generate a cyclically toggled signal.

Career Highlights

Park’s listed work is associated with SK hynix Inc., a company active in semiconductor technology. His patent focuses on transistor stress and measurement operations within an electronic device.

Collaborations

The provided information lists Dae Joon Kim and Min Cheol Kim as Park’s coworkers. Their names are included here as professional associations; no specific joint contribution to the patent is established by the supplied details.

Conclusion

Hyun Jun Park’s listed patent reflects work on electronic-device circuitry for stressing and measuring transistors, associated with his role at SK hynix Inc.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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