Suncheon, South Korea

Hyun Jin Yang

This inventor holds 1 USPTO granted patent. Top assignee: Semes Co., Ltd.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyun Jin Yang. Retrieved from https://idiyas.com/inventor/hyun-jin-yang-c6qqk7to

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Innovations of Hyun Jin Yang

Introduction

Hyun Jin Yang is a notable inventor based in Suncheon-si, South Korea. He has made significant contributions to the field of technology, particularly in the area of exhaust systems and processing equipment.

Latest Patents

Yang holds a patent for an "Exhaust assembly, and liquid processing apparatus and substrate processing equipment including the same." This invention provides an exhaust assembly capable of uniformly forming an air flow during the discharge of gas. The design includes multiple intake ports, a body portion for symmetrical gas discharge paths, and a guide portion to direct the gas flow effectively. This innovative approach enhances the efficiency of gas discharge in substrate processing.

Career Highlights

Hyun Jin Yang is associated with Semes Co., Ltd., where he applies his expertise in developing advanced technologies. His work focuses on improving the functionality and efficiency of processing equipment used in various industrial applications.

Collaborations

Yang collaborates with talented coworkers, including Kyung Min Kim and In Hwang Park, to drive innovation and enhance product development within his company.

Conclusion

Hyun Jin Yang's contributions to technology through his patent and work at Semes Co., Ltd. highlight his role as a key innovator in the field. His inventions continue to influence advancements in processing equipment and exhaust systems.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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