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For the Inventor, By the Inventor

Ansan, South Korea

Hyun Haeng Lee

This inventor holds 3 USPTO granted patents and 1 published patent application. Top assignee: Seoul Viosys Co., Ltd.. Active years: 2016-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyun Haeng Lee. Retrieved from https://idiyas.com/inventor/hyun-haeng-lee-03gpkkav

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 3 

% Patents Active = 33.3

Average Co-Inventor Count = 5.6

ph-index = 3

Forward Citations = 12(Granted Patents)


Company Filing History:

goldMedal3 out of 741 
 
Seoul Viosys Co., Ltd.
 patents

Years Active: 2016-2017

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3 patents (USPTO):Explore Patents
1. 9680060 - Light emitting diode having a plurality of light emitting units (2017-06-13),
2. 9515121 - Light emitting diode and method of fabricating the same (2016-12-06),
3. 9269745 - Light emitting diode having a plurality of light emitting units (2016-02-23),

Title: Hyun Haeng Lee - Innovative Inventor from Ansan-si, South Korea

Introduction: Hyun Haeng Lee is a renowned inventor hailing from Ansan-si, South Korea, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Lee holds several patents in the realm of electronics and telecommunications, showcasing his expertise in developing cutting-edge solutions for modern challenges.

Career Highlights: With a career spanning over two decades, Lee has worked with various tech companies, leading research teams and spearheading projects that have pushed the boundaries of innovation.

Collaborations: Throughout his career, Lee has collaborated with top researchers, engineers, and scientists, fostering a culture of creativity and excellence in all his projects.

Conclusion: Hyun Haeng Lee's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and innovators worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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