This inventor holds 7 USPTO granted patents. Top assignees: Samsung Electronics Co., Ltd., Samsung Display Co., Ltd.. Active years: 1999-2013.
Location History:
- Kyungki-do, KR (1999 - 2002)
- Yongin-shi, KR (2004)
- Yongin, KR (2006)
- Gyeonggi-do, KR (2010)
- Suwon-si, KR (2013)
Company Filing History:
6 out of 132,108 
1 out of 27,287 
Years Active: 1999-2013
Title: Hyun-Dae Kim: Innovator in Silicon Crystallization Technology
Introduction
Hyun-Dae Kim is a prominent inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of silicon crystallization, holding a total of 7 patents. His innovative work has implications for the electronics industry, particularly in enhancing the electronic characteristics of silicon.
Latest Patents
One of Hyun-Dae Kim's latest patents is a mask for crystallizing silicon, which includes a first, second, and third pattern part arranged in a longitudinal direction. Each of these pattern parts consists of a plurality of unit blocks designed to transmit and block portions of light. Notably, at least two of the pattern parts correspond to each other, allowing for effective scans that remove boundaries on the silicon. This innovation improves the electronic characteristics of silicon by addressing the differences in laser beam irradiation received during the crystallization process.
Career Highlights
Hyun-Dae Kim has worked with leading companies in the technology sector, including Samsung Electronics Co., Ltd. and Samsung Display Co., Ltd. His experience in these organizations has allowed him to develop and refine his innovative ideas in silicon technology.
Collaborations
Some of his notable coworkers include Byoung-Sun Na and Kook-Chul Moon. Their collaboration has contributed to the advancement of technologies in the field of silicon crystallization.
Conclusion
Hyun-Dae Kim's work in silicon crystallization technology showcases his innovative spirit and dedication to improving electronic materials. His patents reflect a commitment to advancing the field and enhancing the performance of silicon in various applications.