Kyoungki-do, South Korea

Hyun-Chul Shon


Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 41(Granted Patents)


Company Filing History:


Years Active: 2006

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1 patent (USPTO):Explore Patents

Title: Hyun-Chul Shon: Innovator in Semiconductor Fabrication

Introduction

Hyun-Chul Shon is a prominent inventor based in Kyoungki-do, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods for device fabrication. His work is recognized for enhancing the reliability and efficiency of semiconductor devices.

Latest Patents

Hyun-Chul Shon holds a patent for a "Method for fabricating semiconductor device by using radical oxidation." This invention provides a streamlined process for creating a semiconductor device with a dual gate dielectric structure. The method involves several key steps, including the formation of an insulation layer on a substrate, the creation of a nitride layer, and the execution of a radical oxidation process to develop an oxide layer. This innovative approach not only simplifies the fabrication process but also improves the overall reliability of the devices produced.

Career Highlights

Hyun-Chul Shon is associated with Hynix Semiconductor Inc., a leading company in the semiconductor industry. His work at Hynix has positioned him as a key player in advancing semiconductor technologies. With a focus on innovative fabrication methods, he continues to contribute to the development of high-performance semiconductor devices.

Collaborations

Hyun-Chul Shon has collaborated with notable colleagues, including Heung-Jae Cho and Se-Aug Jang. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas within the semiconductor field.

Conclusion

Hyun-Chul Shon is a distinguished inventor whose work in semiconductor fabrication has made a lasting impact on the industry. His innovative methods and collaborations highlight his commitment to advancing technology and improving device reliability.

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