Hyuksang Kwon

Title: Hyuksang Kwon: Innovator in Black Phosphorus Technology

Introduction

Hyuksang Kwon is a prominent inventor based in Daejeon, South Korea. He has made significant contributions to the field of materials science, particularly in the development of black phosphorus thin films. With a total of 3 patents to his name, Kwon is recognized for his innovative approaches to semiconductor technology.

Latest Patents

Kwon's latest patents include groundbreaking work on a lateral p-n junction black phosphorus thin film. This invention provides a method for creating a lateral junction by modifying specific regions of the black phosphorus thin film through light irradiation. The result is a p-type and n-type black phosphorus thin film that exhibits enhanced semiconductor properties. Another notable patent is his method of fabricating a black phosphorus ultrathin film. This method involves forming the ultrathin film in a controlled chamber using active oxygen, resulting in a uniform surface with minimal defects, making it highly suitable for optoelectronic devices and field effect transistors.

Career Highlights

Hyuksang Kwon is affiliated with the Korea Research Institute of Standards and Science, where he continues to push the boundaries of research in semiconductor materials. His work has garnered attention for its potential applications in various electronic devices.

Collaborations

Kwon has collaborated with notable colleagues, including Jeong Won Kim and Eun Seong Lee, contributing to the advancement of research in their field.

Conclusion

Hyuksang Kwon's innovative work in black phosphorus technology positions him as a key figure in the development of advanced semiconductor materials. His contributions are paving the way for future advancements in optoelectronic applications.