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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10468604 B1

PDFFull Text
Date of Patent:
Nov. 05, 2019

Filed:

Dec. 28, 2016

Lateral p-n junction black phosphorus thin film, and method of manufacturing the same

Applicant:

Korea Research Institute of Standards and Science, Daejeon, KR;

Inventors:

Ansoon Kim, Daejeon, KR;

Songwoung Hong, Daejeon, KR;

Jeong Won Kim, Daejeon, KR;

Hyuksang Kwon, Daejeon, KR;

Assignee:

Korea Research Institute of Standards and Science, Daejeon, KR;

Attorney:

McCoy Russell LLP

Primary Examiner:

Roy K Potter

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 51/00 (2006.01); C01B 25/02 (2006.01); H01L 29/70 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01); H01L 29/24 (2006.01); H01L 51/42 (2006.01); H01L 51/05 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0067 (2013.01); C01B 25/02 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/70 (2013.01); H01L 29/861 (2013.01); H01L 29/778 (2013.01); H01L 51/0015 (2013.01); H01L 51/05 (2013.01); H01L 51/0558 (2013.01); H01L 51/0575 (2013.01); H01L 51/42 (2013.01);
Abstract

Provided are a lateral p-n junction black phosphorus thin film, and a method of manufacturing the same, and specifically, a lateral p-n junction black phosphorus thin film in which a p-type black phosphorus thin film having a p-type semiconductor property and a n-type black phosphorus thin film having a n-type semiconductor property form a lateral junction by modifying some regions on a surface of the black phosphorus thin film through light irradiation with a compound having a specific chemical structure, and a method of manufacturing the same.

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