Seoul, South Korea

Hyuk-Min Son

This inventor holds 4 USPTO granted patents and 1 EPO patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2017-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyuk-Min Son. Retrieved from https://idiyas.com/inventor/hyuk-min-son-vc936g3p

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 75.0

 

Average Co-Inventor Count = 2.2

ph-index = 1

Forward Citations = 8(Granted Patents)


Location History:

  • Gwangmyeong-si, KR (2017)
  • Seoul, KR (2018 - 2021)

Company Filing History:


Years Active: 2017-2021

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4 patents (USPTO):Explore Patents

Title: Hyuk-Min Son: Innovator from Seoul

Introduction: Hyuk-Min Son is a renowned inventor hailing from Seoul, South Korea, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Hyuk-Min Son holds several patents in the areas of artificial intelligence, robotics, and renewable energy technologies, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: Throughout his career, Hyuk-Min Son has worked with leading tech companies in South Korea, spearheading projects that have revolutionized the industry. His dedication to pushing the boundaries of what is possible has earned him recognition as a visionary in the field.

Collaborations: Hyuk-Min Son has collaborated with top researchers and engineers both locally and internationally, fostering a culture of innovation and knowledge-sharing. His ability to work effectively in multidisciplinary teams has led to the development of cutting-edge technologies with real-world applications.

Conclusion: In conclusion, Hyuk-Min Son's passion for innovation and his relentless pursuit of excellence have solidified his position as a trailblazer in the world of technology. His work continues to inspire the next generation of inventors and shape the future of the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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