Hyucksoo Yang

Title: Hyucksoo Yang: Innovator in Memory Device Technology

Introduction

Hyucksoo Yang is a prominent inventor based in Meridian, ID (US). He has made significant contributions to the field of memory devices, particularly through his innovative patent.

Latest Patents

Hyucksoo Yang holds a patent for a "Metal gate memory device and method." This invention discloses apparatus and methods that include memory devices and systems. The patent describes an array of memory cells and a transistor located on the periphery of the array. A number of data lines are coupled to the memory cells in the array, extending over a first metal gate of a transistor in the periphery. These data lines are formed from a second metal and create a direct interface with the first metal gate. This invention showcases his expertise in advancing memory technology.

Career Highlights

Hyucksoo Yang is associated with Micron Technology Incorporated, a leading company in the semiconductor industry. His work at Micron has allowed him to contribute to cutting-edge memory solutions that are essential for modern computing.

Collaborations

Throughout his career, Hyucksoo has collaborated with notable colleagues, including Jongpyo Kim and Byung Yoon Kim. These collaborations have further enhanced the development of innovative memory technologies.

Conclusion

Hyucksoo Yang's contributions to memory device technology through his patent and work at Micron Technology Incorporated highlight his role as a key innovator in the field. His advancements continue to influence the future of memory systems.