Seoul, South Korea

Hyoung-Yun Byun

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyoung-Yun Byun. Retrieved from https://idiyas.com/inventor/hyoung-yun-byun

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 9(Granted Patents)


Company Filing History:


Years Active: 2004

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1 patent (USPTO):Explore Patents

Title: Hyoung-Yun Byun: Innovator in Read Only Memory Technology

Introduction

Hyoung-Yun Byun is a prominent inventor based in Seoul, South Korea. He is known for his significant contributions to the field of memory technology, particularly in the development of read only memory (ROM) cells. His innovative work has led to advancements that enhance the efficiency and functionality of ROM devices.

Latest Patents

Hyoung-Yun Byun holds a patent for a read only memory (ROM) cell, which includes a program method, layout method, and a ROM device comprising the ROM cell. The patent describes a ROM cell that features a gate connected to a word line, a drain (or source) linked to a bit line, and a source (or drain) connected to a ground voltage line. The ROM cell is capable of storing two bits of data and can be programmed with various data configurations by connecting the source (or drain) to different signal lines. This innovative design allows for a reduction in layout size, as it eliminates the need for additional circuits to manage parasitic capacitances between bit lines.

Career Highlights

Hyoung-Yun Byun is currently employed at Samsung Electronics Co., Ltd., a leading global technology company. His work at Samsung has positioned him at the forefront of memory technology innovation. Byun's expertise in ROM technology has contributed to the company's advancements in electronic devices and memory solutions.

Collaborations

Hyoung-Yun Byun has collaborated with notable colleagues, including Nak-Woo Sung and Yong-jae Choo. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas within the field of memory technology.

Conclusion

Hyoung-Yun Byun is a key figure in the development of read only memory technology, with a patent that showcases his innovative approach to ROM cell design. His contributions at Samsung Electronics Co., Ltd. and collaborations with fellow inventors highlight his commitment to advancing technology in the memory sector.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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